Paddle chamber with anti-splashing baffles

ABSTRACT

Electroplating systems according to embodiments of the present technology may include a plating chamber configured to deposit metal material onto substrates positioned in the plating chamber. The plating chamber may include a rotor and a vessel. The electroplating systems may include at least one of baffle positioned in the plating chamber. The at least one baffle may define a plurality of slots. The at least one baffle may be configured to limit or prevent fluid from splashing the rotor or the plating chamber during operation of the plating chamber.

TECHNICAL FIELD

The present technology relates to components and apparatuses forsemiconductor manufacturing. More specifically, the present technologyrelates to processing chamber components and other semiconductorprocessing equipment.

BACKGROUND

Integrated circuits are made possible by processes which produceintricately patterned material layers on substrate surfaces. Afterformation, etching, and other processing on a substrate, metal or otherconductive materials are often deposited or formed to provide theelectrical connections between components. Because this metallizationmay be performed after many manufacturing operations, problems occurringduring the metallization may create expensive waste substrates orwafers.

Electroplating is performed in an electroplating chamber with the deviceside of the wafer in a bath of liquid electrolyte, and with electricalcontacts on a contact ring touching a conductive layer on the wafersurface. Electrical current is passed through the electrolyte and theconductive layer. Metal ions in the electrolyte plate out onto thewafer, creating a metal layer on the wafer. Electroplating operationsmay include a number of operations with liquid distribution that maycause plating fluid to be lost, diluted, or otherwise affected by theprocess being performed.

Thus, there is a need for improved systems and methods that can be usedto produce high quality devices and structures while protecting both thesubstrate and the plating baths. These and other needs are addressed bythe present technology.

SUMMARY

Electroplating systems according to embodiments of the presenttechnology may include a plating chamber configured to deposit metalmaterial onto substrates positioned in the plating chamber. The platingchamber may include a rotor and a vessel. The electroplating systems mayinclude at least one of baffle positioned in the plating chamber. The atleast one baffle may define a plurality of slots. The at least onebaffle may be configured to limit or prevent fluid from splashing therotor or the plating chamber during operation of the plating chamber.

In some embodiments, the at least one baffle may be positioned at thetop of the vessel at least partially above a fluid line of the fluid.The at least one baffle may include a mounting tab defining at least onemounting hole. The mounting tab may extend within at least one slot ofthe plurality of slots. The at least one mounting hole may be sized toreceive a mounting screw. The at least one baffle may include a mountingtab defining at least one mounting hole. The mounting tab may bepositioned external to the plurality of slots. The at least one mountinghole sized to receive a mounting screw. The at least one baffle may bepositioned horizontally adjacent to a weir thief electrode assembly andvertically adjacent to the rotor and a paddle. The paddle may bepositioned on the weir thief electrode assembly and configured to movein at least one direction. The at least one baffle may prevent motion ofthe fluid in at least one direction by obstructing fluid movement usingthe plurality of slots. A height of the at least one baffle may begreater than or about 15% of a length of the at least one baffle. A meshmay be positioned in each slot of the plurality of slots.

Some embodiments of the present technology may encompass bafflesconfigured to prevent fluid from splashing a rotor or a plating chamberduring operation of the plating chamber. The baffles may include aplurality of slots. The baffles may include at least one mounting tabfor attaching the baffle to the plating chamber. In some embodiments,the baffle may be at least one baffle. The at least one baffle may bepositioned at the top of a vessel at least partially above a fluid lineof the fluid. The vessel may be included in the plating chamber. Eachslot of the plurality of slots may be characterized by a width of lessthan or about 25% of a length of the at least one baffle. The mountingtab may define at least one mounting hole. The mounting tab may extendwithin at least one slot of the plurality of slots. The at least onemounting hole may be sized to receive a mounting screw. The mounting tabmay define at least one mounting hole. The mounting tab may bepositioned external to the plurality of slots. The at least one mountinghole may be sized to receive a mounting screw. A height of the at leastone baffle may be greater than or about 15% of a length of the at leastone baffle. The mounting tab may be a flange positioned on the bafflefor coupling the baffle to the plating chamber. A mesh may be positionedin each slot of the plurality of slots.

Some embodiments of the present technology may encompass electroplatingsystems. The systems may include a vessel assembly for holding anelectrolyte. The systems may include a weir thief electrode assembly inthe vessel assembly. The weir thief electrode assembly may include aplenum inside of a weir frame. The systems may include a plurality ofspaced apart openings through the weir frame into the plenum. Thesystems may include a weir ring attached to the weir frame. The systemsmay include at least one baffle disposed in the vessel assembly. The atleast one baffle may define a plurality of slots. The at least onebaffle may be configured to prevent fluid from splashing a rotor or aplating chamber during operation of the electroplating system.

In some embodiments, the at least one baffle may be positioned at thetop of the vessel assembly at least partially above a fluid line of theelectrolyte. The at least one baffle may include a mounting tab definingat least one mounting hole. The mounting tab may extend within at leastone slot of the plurality of slots. The at least one mounting hole maybe configured to facilitate attachment of the at least one baffle to theweir thief electrode assembly. The at least one baffle may include amounting tab defining at least one mounting hole. The mounting tab maybe positioned external to the plurality of slots. The at least onemounting hole may be sized to receive a mounting screw. A height of theat least one baffle may be greater than or about 15% of a length of theat least one baffle. A mesh may be positioned in each slot of theplurality of slots.

Such technology may provide numerous benefits over conventional systemsand techniques. For example, embodiments of the present technology maymitigate or eliminate splashing of plating fluid within the platingchamber. This may reduce down time for cleaning, and may help maintainadditive levels in the fluid. These and other embodiments, along withtheir advantages and features, are described in more detail inconjunction with the below description and attached figures.

BRIEF DESCRIPTION OF THE DRAWINGS

A further understanding of the nature and advantages of the disclosedembodiments may be realized by reference to the remaining portions ofthe specification and the drawings.

FIG. 1 is a schematic perspective view of an electroplating systemaccording to some embodiments of the present technology.

FIG. 2 is a schematic perspective view of a vessel assembly of anelectroplating chamber according to some embodiments of the presenttechnology.

FIG. 3 is a schematic top view of an electroplating chamber according tosome embodiments of the present technology.

FIGS. 4A-4B are schematic perspective views of baffles according to someembodiments of the present technology.

FIGS. 5A-5B are schematic perspective views of baffles according to someembodiments of the present technology.

FIG. 6 is a schematic partial top view of a vessel of an electroplatingchamber according to some embodiments of the present technology.

FIG. 7 is a schematic partial perspective view of a vessel of anelectroplating chamber according to some embodiments of the presenttechnology.

FIG. 8 shows operations of an exemplary method of semiconductorprocessing according to some embodiments of the present technology.

Several of the figures are included as schematics. It is to beunderstood that the figures are for illustrative purposes, and are notto be considered of scale unless specifically stated to be of scale.Additionally, as schematics, the figures are provided to aidcomprehension and may not include all aspects or information compared torealistic representations, and may include exaggerated material forillustrative purposes.

In the figures, similar components and/or features may have the samenumerical reference label. Further, various components of the same typemay be distinguished by following the reference label by a letter thatdistinguishes among the similar components and/or features. If only thefirst numerical reference label is used in the specification, thedescription is applicable to any one of the similar components and/orfeatures having the same first numerical reference label irrespective ofthe letter suffix.

DETAILED DESCRIPTION

Microelectronic devices, such as semiconductor devices, can befabricated on or in wafers or work pieces. A typical wafer platingprocess may involve depositing a metal seed layer onto a surface of thewafer via vapor deposition. A photoresist may be deposited and patternedto expose the seed layer. The wafer may then be moved into a vessel orhead of an electroplating system in which electric current may beconducted through an electrolyte to the wafer for applying a blanketlayer or patterned layer of a metal material or other conductivematerial onto the seed layer. Examples of conductive materials mayinclude gold, silver, copper, cobalt, tin, nickel, and alloys of thesemetals, etc. Subsequent processing steps may form components, contacts,conductive lines on the wafer, or a combination thereof.

In some applications, it may be important that the plated film or layersof metal have a uniform thickness across the wafer or the work piece.Some electroplating systems use a current thief, which is an electrodehaving the same polarity as the wafer. The current thief may bepositioned on or in a weir thief electrode assembly and may operate bydrawing current away from an edge of the wafer. This may help to keepthe plating thickness at the edge of the wafer more uniform with aplating thickness over other portions of the wafer. The current thiefmay be a physical electrode close to the edge of the wafer.Alternatively the current thief may be a virtual current thief, wherethe physical electrode is remote from the wafer. In this design, currentfrom the remote physical electrode is conducted through electrolyte topositions near the wafer. Electroplating processes in wafer levelpackaging and other applications are diverse with variations in processand wafer patterns. Significant plating non-uniformities often occuralong the edge of the wafer pattern. Non-uniformities can be caused byirregularities in the electric field due to pattern variations or bymass-transfer non-uniformities near the wafer edge.

Some electroplating processors can use a paddle or an agitator toagitate the electrolyte, or fluid in the electroplating system, andincrease mass transfer of metal ions in the electrolyte onto the wafer,which can also improve plating uniformity. However, the agitation of theelectrolyte, or the fluid, may lead to splashing on portions of theelectroplating system such as a rotor or a chamber of the electroplatingsystem. Oscillatory motion of the paddle can produce waves or wave-likemotion of the fluid that can create the splashing as waves flowing inopposite directions contact. This splashing may yield undesirableeffects including additional cleaning operations as well as contact ofacid on a number of chamber components, which may cause damage overtime. To correct or otherwise prevent these challenges, the presenttechnology may include one or more baffles in the electroplating system.The baffles may prevent splashing of the fluid by obstructing movementof the electrolyte or fluid.

Although the remaining disclosure will routinely identify specificplating processes utilizing the disclosed technology, it will be readilyunderstood that the systems and methods are equally applicable to othermetals and chamber configurations. Accordingly, the technology shouldnot be considered to be so limited as for use with these specificplating processes or chambers alone. The technology will discuss onepossible system and chamber that may include components according toembodiments of the present technology before additional variations andadjustments to this system according to embodiments of the presenttechnology are described.

FIG. 1 is a schematic view of an electroplating system 20, according tosome embodiments of the present technology. The electroplating system 20as illustrated, may include a head 30 that may be positioned above avessel assembly 36, which may be a chamber as discussed further below.The electroplating system 20 may be a standalone unit, although theelectroplating system 20 may be one of a set of plating systems providedin arrays within an enclosure, with wafers or work pieces loaded andunloaded into and out of processors by one or more robots. The head 30may be supported on a lift or a lift/rotate unit 34. The lift/rotateunit 34 may be configured to lift the head 30, invert the head 30, orboth, to load and unload a wafer into a rotor 32 within the head 30, andmay be configured for lowering the head 30 into engagement with thevessel assembly 36 for processing. The rotor 32 may include a contactring that may make electrical contact with a wafer held in the rotor 32during processing. Electrical control and power cables 40 may becommunicatively coupled with the lift/rotate unit 34 and to internalhead components leading up from system to facility connections, or toconnections within a multi-processor automated system. A rinse assembly28 may have tiered drain rings may be provided above a vessel frame 50.

FIG. 2 is a schematic view of vessel assembly 36, of an electroplatingchamber, according to some embodiments of the present technology. A weirthief electrode assembly 52 may be positioned near the top of the vesselframe 50 or vessel, and a paddle 54 may be positioned in the vesselassembly 36 below a level of the segmented weir thief electrode assembly52. The paddle 54 can be moved by a paddle actuator 56 that may bepositioned on a vessel mounting plate 38. Within the rinse assembly, aset of drain rings may be included, and may be connected to drain andvacuum facilities via one or more drain fittings 42 and aspirationfittings 44. Multiple latches 90, which may be on a lower cup of ananode assembly, or on the base plate, may engage with latch rings 92 onthe vessel frame 50 or on the vessel mounting plate 38, which may allowquick installation and removal of an anode assembly.

The paddle 54 may be configured to oscillate back-and-forth laterally tofacilitate deposition of a metal product on a substrate positioned inthe electroplating system 20. The oscillatory motion of the paddle 54may cause fluid contained in the vessel assembly 36 to form waves orincur wave-like motion. However, this motion may cause waves to contact,which may cause an upward delivery of plating fluid that may splashfluid on components of the electroplating system 20 such as the rotor 32or the head 30. By incorporating baffles according to embodiments of thepresent technology in locations where splashing may occur, the bafflesmay limit or prevent fluid loss from the chamber.

FIG. 3 is a schematic partial top view of an electroplating chamber 300according to some embodiments of the present technology, such as withthe rotor and head removed. The chamber 300 may be similar to the vesselassembly 36 of FIG. 1 or FIG. 2 , and may include any component,feature, or characteristic as discussed above, and may illustrateadditional features of electroplating systems according to embodimentsof the present technology. As illustrated, the chamber may include amounting plate 38, within which a vessel 50 may be seated. As previouslydescribed, a head, having a rotor, may extend within the vessel toperform electroplating operations.

Coupled with the vessel may be a weir thief electrode assembly 52, whichmay include a number of lugs that may be spaced about the assembly to beconnected with the vessel frame. A paddle 54 may be disposed within thevessel, and operated with a paddle actuator 56 that may move the paddleback and forth to cause oscillations within the plating fluid duringplating operations. As illustrated, the coupling of the weir thiefelectrode assembly 52 with the vessel frame 50 may at least partiallyform sealed regions about the vessel, which may maintain the platingfluid within the plating chamber. However, at regions about the two endsof the paddle actuator, the vessel may be exposed radially outward ofthe weir thief electrode assembly as illustrated. During actuation,plating fluid flowing in waves from the oscillation of the paddle maycause interact with other waves. This may cause upward projections ofthe fluid that may flow out of the vessel and splash onto any number ofcomponents, including the rotor positioned within the vessel, thevessel, the paddle actuator, and other aspects of the vessel assembly.

Accordingly, in some embodiments of the present technology, one or morebaffles 302 may be incorporated within the vessel frame at locationsradially outward of the weir thief electrode assembly, and which may beover exposed accesses of the vessel. Chamber 300 includes three baffles302A, 302B, and 302C, as illustrated, although it is to be understoodthat any number of baffles may be incorporated in systems according toembodiments of the present technology. The baffles 302, as illustrated,may not be symmetric, and may include multiple geometries orconfigurations, which may accommodate different aspects of the vesselassembly. For example, paddle actuator 56 may include a single couplinglocated at a first location about the vessel assembly, while includingmultiple couplings located at a second location about the vesselassembly, such as a second location opposite the first location.Although one and two connection locations are illustrated, it is to beunderstood that any number of connections may be encompassed byembodiments of the present technology. As illustrated, gaps at thevessel assembly may then be between connections at the second location,where the connections extend to the paddle proximate lugs of the weirthief electrode assembly. Additionally, gaps at the vessel assembly mayalso be on either side of the connection at the first location. In someembodiments, baffles 302 may be included to accommodate each of theseconfigurations.

At the first location, a baffle 302 may be positioned on either side ofthe actuator coupling, such as baffles 302A and 302B, while a baffle302C may be positioned between the two actuator couplings at the secondlocation. Baffles 302A and 302B may each be coupled with the weir thiefelectrode assembly, such as coupled at a lug location. Apertures througha lug of the baffle may accommodate the lug connectors to couple withthe vessel frame indirectly. Baffle 302C may directly couple with thevessel frame between the two actuator couplings. In operation, chamber300 may include fluid that facilitates processing in the electroplatingsystem. The paddle 54 may oscillate back-and-forth in the fluid,creating waves or wave-like motion in the fluid, which may splash out ofthe chamber in conventional systems. However, baffles 302 may obstructthe waves or wave-like motion of the fluid, thereby preventing the fluidfrom splashing out of the vessel. The baffles 302 may be positionedradially adjacent to the weir thief electrode assembly 52 and verticallyadjacent to the rotor 32 and the head 30, and the baffles 302 may bevertically positioned in which a level of fluid is at or below a levelof the baffles 302.

FIGS. 4A-4B show schematic perspective views of baffles 400 according tosome embodiments of the present technology, and may show detailed viewsof baffles 302C as discussed above. As illustrated, the baffles 400 mayillustrate baffles having differing numbers of slots 402 formed withinthe baffles. By including additional slots, a further break may beprovided for electroplating fluid, although it is to be understood thatany number of slots may be formed to produce barriers to fluid flowabove a level of the baffles. The baffles 400 may be configured toprevent splashing in the vessel of the electroplating system byobstructing motion of fluid in the vessel during a processing operationof the electroplating system. The baffles may be positioned in thevessel at the same level of the fluid in the vessel, or at leastslightly above or below an established static or variable level of theplating fluid, such as during operation.

The baffles 400 may define a set of slots 402, as illustrated, which maybe disposed at any distance along the baffle. For example, slots may beformed at distances of less than or about 5 cm, less than or about 4 cm,less than or about 3 cm, less than or about 2 cm, less than or about 2cm, or less along the length of the baffle. As shown in FIG. 4A, thebaffle includes ten slots 402A, and the baffle in FIG. 4B includes 14slots 402B, although the baffles may be of the same or similar overallsize. The slots may be maintained open as illustrated, although in someexamples a mesh may be included in the set of slots for further reducingor eliminating splashing in the electroplating system. The baffles maybe characterized by a height of greater than or approximately 10% of thelength of the baffles, and may be characterized by a height of greaterthan or about 15% of the length of the baffles, greater than or about20% of the length, or greater. The baffles may be constructed of anysuitable material for use in the electroplating system, which mayinclude a polymeric or other material that may be insulative and may beinert within the plating bath. For example, in some embodiments thebaffles may be or include polytetrafluoroethylene, polyether etherketone, or other ceramic or polymer materials that may be stable withina plating bath.

The baffles 400, as illustrated in FIG. 4 , may include one or moremounting tabs 404 positioned within the slots. The mounting tabs 404 maybe sized to receive a mounting screw, tab, bolt, or other coupling itemsfor attaching the baffles to the vessel of the electroplating system.Additionally, the mounting tabs 404 may press fit or connect with a slotformed in the vessel frame, or any other connection mechanism forcoupling the component. As illustrated, while a first longitudinal edgemay be relatively straight, an opposite edge may be characterized by anarcuate profile to accommodate the rounded profile of the weir thiefelectrode assembly within the system.

FIGS. 5A-5B are schematic perspective views of baffles 500 according tosome embodiments of the present technology, and may show detailed viewsof baffles, such as baffles 302A and 302B as discussed above. Baffles500 may include any feature or characteristics of any baffle previouslydescribed. As illustrated, the baffles again may illustrate baffleshaving differing numbers of slots 502 formed within the baffles. Forexample, the baffles may be characterized by a shape to accommodate aprofile of the vessel radially outward of the weir thief electrodeassembly as previously described. The baffles may include any number ofslots, such as fewer slots 502A, or more slots 502B. The slots may bemaintained open as illustrated, although in some examples a mesh may beincluded in the set of slots for further reducing or eliminatingsplashing in the electroplating system. Additionally, the baffles 500may include a mounting tab 504 positioned laterally outward from theslots as illustrated, and may define an aperture for receiving a bolt orother coupling mechanism to seat the baffle against a weir thiefelectrode assembly lug as previously described. Unlike baffles 400,baffles 500 may be positioned on opposite sides of an actuator couplingas discussed above. Accordingly, the baffles may be limited to a singlelocation for coupling, which may be on a lug for the weir thiefelectrode assembly. Accordingly, in some embodiments, baffles 500 maydefine a rim or flange 506 extending from exterior walls of the baffle,which may allow the end of the baffle opposite the mounting tab to beseated against the vessel assembly, which may limit or prevent movementduring operation. For example, flange 506 may extend from a radiallyinner wall and a radially outer wall of the baffle, and may extend alongany length of the baffle as illustrated.

FIG. 6 is a schematic partial top view of a vessel of an electroplatingchamber 600 according to some embodiments of the present technology. Asillustrated, the baffle 400 may be installed on the vessel ofelectroplating chamber 300. The baffle 400 may be attached to the vesselvia at least one mounting tab 602 having at least one mounting screw,bolt, or other fastener. In some embodiments, the at least one mountingtab 602 may be configured to attach or otherwise install the baffle 400to the vessel of the electroplating system. The baffle 400 may beinstalled within the vessel as illustrated, such as seated against aback wall, at a level above, below, or about in line with a fluid levelfor plating fluid, when contained in the vessel. In some embodiments,the baffle 400 may additionally be positioned radially outward of andadjacent to the weir thief electrode assembly 52 and vertically adjacentto both the rotor and the paddle of the electroplating system when inoperational position. For example, the baffle 400 may be positionedabove than the paddle, while positioned below a location of the rotor.

FIG. 7 is a schematic partial perspective view of a vessel of anelectroplating chamber 700 according to some embodiments of the presenttechnology. As illustrated, the baffle 500 may be installed on thevessel of electroplating chamber 300. The baffle 500 may be attached tothe vessel via at least one mounting tab 702, which may receive a boltused with a lug of the weir thief electrode assembly 52, using at leastone mounting screw, bolt, or other fastener. The baffle 500 may beinstalled within the vessel as illustrated, such as seated between theweir thief electrode assembly 52, and a drain defined within the vesselframe. Additionally, the baffle 500 may be positioned at a level above,below, or about in line with a fluid level for plating fluid, whencontained in the vessel. In some embodiments, the baffle 500 mayadditionally be positioned radially outward of and adjacent to the weirthief electrode assembly 52 and vertically adjacent to both the rotorand the paddle of the electroplating system when in operationalposition.

For example, the baffle 400 may be positioned above than the paddle,while positioned below a location of the rotor. Additionally, the flangeof the baffle as described above, may allow the baffle to seat on a rimof the weir thief electrode assembly 52 along a radially inner wall ofthe baffle. Additionally, the flange may allow the baffle to also seaton a rim of the vessel frame along a radially outer wall of the baffle.This may allow the baffle to be substantially maintained in place duringoperation, where the system may have a gap on an opposite end of thebaffle from the mounting tab, which may otherwise limit mounting optionswithin the system.

FIG. 8 shows a flow chart for a process 800 of semiconductor processingaccording to some embodiments of the present technology, and mayillustrate methods of operation for plating systems including baffles aspreviously described. The process may be performed in a variety ofprocessing chambers, including any of the chambers previously described,and which may include components according to embodiments of the presenttechnology, such as any baffle, or other component discussed previously.The process 800 may include a number of optional operations, which mayor may not be specifically associated with some embodiments of methodsaccording to the present technology.

The electroplating chamber may be any of the chambers previouslydescribed, and may include any number of baffles, including any baffleconfiguration as previously described. At optional operation 802, theprocess 800 may include installing at least one baffle in theelectroplating system. As described previously, during operation, apaddle of the electroplating system may oscillate back and forth in avessel of the electroplating chamber in two or more directions while adeposition process is being performed. To reduce or eliminate thesplashing, at least one baffle can be installed in gaps about thesystem, which may form barriers against wave activity as the waves oreddies extend upward into the slots of the baffles.

A substrate may be chucked to a head or rotor of the electroplatingsystem, and a processing operation may be performed at operation 804.The processing may include a plating operation, where a metal, such asany metal previously described may be plated onto the substrate, whichmay include any number of features. A paddle may be actuated by a paddleactuator in a back-and-forth motion to form currents or waves within aplating fluid disposed within the vessel, which may improve platingoperations as previously described. Waves or currents may be formed at asurface of the plating fluid, which may create vertical motion. Whenthese waves contact additional waves, the fluid may flow upward at gapswithin the system, which if open may otherwise allow splashing. However,with baffles installed within the system, the waves may extend up intoslots formed in the baffles, which may form barriers to wave formation.This may break the formation of waves, which limit or prevent splashingwithin the system.

Although in some embodiments the method may be completed if waveformation or splashing is sufficiently limited or prevented, in someembodiments adjustments may be made to the baffles. For example, atoptional operation 806, the process may include inspecting theelectroplating system for splashing, and determining at optionaloperation 808 whether splashing has been sufficiently eliminated. Ifplating fluid has been directed onto the rotor, or any other chambercomponent, the method may include adjusting the baffles at optionaloperation 810. For example, the adjustment may include adding baffles,or raising or lowering the baffles in relation to a plating fluid tobetter contact the fluid or better interact with moving fluid within thevessel.

This process may then be repeated for any number of substrates untilfluid control has been achieved. Once splashing or fluid loss has beenreduced sufficiently or eliminated at optional operation 812 productionmay be continued, and any number of substrates may be processed. Byutilizing baffles according to any embodiments of the presenttechnology, improved control of fluid flow within an electroplatingchamber may be achieved. The baffles may accommodate any number ofchamber configurations, and may be sized or shaped to accommodate anynumber of gaps within a system where plating fluid may otherwise flowfrom the vessel.

In the preceding description, for the purposes of explanation, numerousdetails have been set forth in order to provide an understanding ofvarious embodiments of the present technology. It will be apparent toone skilled in the art, however, that certain embodiments may bepracticed without some of these details, or with additional details.

Having disclosed several embodiments, it will be recognized by those ofskill in the art that various modifications, alternative constructions,and equivalents may be used without departing from the spirit of theembodiments. Additionally, a number of well-known processes and elementshave not been described in order to avoid unnecessarily obscuring thepresent technology. Accordingly, the above description should not betaken as limiting the scope of the technology.

Where a range of values is provided, it is understood that eachintervening value, to the smallest fraction of the unit of the lowerlimit, unless the context clearly dictates otherwise, between the upperand lower limits of that range is also specifically disclosed. Anynarrower range between any stated values or unstated intervening valuesin a stated range and any other stated or intervening value in thatstated range is encompassed. The upper and lower limits of those smallerranges may independently be included or excluded in the range, and eachrange where either, neither, or both limits are included in the smallerranges is also encompassed within the technology, subject to anyspecifically excluded limit in the stated range. Where the stated rangeincludes one or both of the limits, ranges excluding either or both ofthose included limits are also included.

As used herein and in the appended claims, the singular forms “a”, “an”,and “the” include plural references unless the context clearly dictatesotherwise. Thus, for example, reference to “an aperture” includes aplurality of such apertures, and reference to “the baffle” includesreference to one or more baffles and equivalents thereof known to thoseskilled in the art, and so forth.

Also, the words “comprise(s)”, “comprising”, “contain(s)”, “containing”,“include(s)”, and “including”, when used in this specification and inthe following claims, are intended to specify the presence of statedfeatures, integers, components, or operations, but they do not precludethe presence or addition of one or more other features, integers,components, operations, acts, or groups.

What is claimed is:
 1. An electroplating system comprising: a platingchamber configured to deposit metal material onto substrates positionedin the plating chamber, the plating chamber comprising a rotor and avessel; a weir thief electrode disposed in the vessel; and at least oneof baffle positioned in the plating chamber, the at least one baffledefining a plurality of slots, the at least one baffle configured toprevent fluid from splashing the rotor or the plating chamber duringoperation of the plating chamber, wherein each slot of the at least onebaffle is disposed radially outward of the weir thief electrode, whereineach slot of the at least one baffle extends vertically through at leasta thickness of a respective baffle.
 2. The electroplating system ofclaim 1, wherein the at least one baffle is positioned at a top of thevessel at least partially above a fluid line of the fluid.
 3. Theelectroplating system of claim 1, wherein the at least one bafflefurther comprises a mounting tab defining at least one mounting hole,wherein the mounting tab extends within at least one slot of theplurality of slots, the at least one mounting hole sized to receive amounting screw.
 4. The electroplating system of claim 1, wherein the atleast one baffle further comprises a mounting tab defining at least onemounting hole, wherein the mounting tab is positioned external to theplurality of slots, the at least one mounting hole sized to receive amounting screw.
 5. The electroplating system of claim 1, wherein the atleast one baffle is positioned horizontally adjacent to a weir thiefelectrode assembly and vertically adjacent to the rotor and a paddle,the paddle positioned on the weir thief electrode assembly andconfigured to move in at least one direction, and wherein the at leastone baffle prevents motion of the fluid in at least one direction byobstructing fluid movement using the plurality of slots.
 6. Theelectroplating system of claim 1, wherein a height of the at least onebaffle is greater than or about 15% of a length of the at least onebaffle.
 7. The electroplating system of claim 1, wherein a mesh ispositioned in each slot of the plurality of slots.
 8. An electroplatingsystem comprising: a vessel assembly for holding an electrolyte; a weirthief electrode disposed in the vessel assembly; and at least one baffledisposed in the vessel assembly, the at least one baffle defining aplurality of slots, the at least one baffle configured to prevent fluidfrom splashing a rotor or a plating chamber during operation of theelectroplating system, wherein each slot of the at least one baffle isdisposed radially outward of the weir thief electrode, and wherein eachslot of the at least one baffle extends vertically through at least athickness of a respective baffle.
 9. The electroplating system of claim8, wherein the at least one baffle is positioned at a top of the vesselassembly at least partially above a fluid line of the electrolyte. 10.The electroplating system of claim 8, wherein the at least one bafflefurther comprises a mounting tab defining at least one mounting hole,wherein the mounting tab extends within at least one slot of theplurality of slots, the at least one mounting hole configured tofacilitate attachment of the at least one baffle to the weir thiefelectrode.
 11. The electroplating system of claim 8, wherein the atleast one baffle further comprises a mounting tab defining at least onemounting hole, wherein the mounting tab is positioned external to theplurality of slots, the at least one mounting hole sized to receive amounting screw.
 12. The electroplating system of claim 8, wherein aheight of the at least one baffle is greater than or about 15% of alength of the at least one baffle.
 13. The electroplating system ofclaim 8, wherein a mesh is positioned in each slot of the plurality ofslots.
 14. The electroplating system of claim 8, wherein the at leastone baffle further comprises a mounting tab defining at least onemounting hole, wherein the mounting tab extends within at least one slotof the plurality of slots, the at least one mounting hole sized toreceive a mounting screw.
 15. The electroplating system of claim 11,wherein the mounting tab is a flange positioned on the at least onebaffle for coupling the at least one baffle to the plating chamber. 16.The electroplating system of claim 8, wherein adjacent slots of theplurality of slots are separated by a dividing member that extends alongthe thickness of the respective baffle.
 17. The electroplating system ofclaim 8, wherein each slot of the plurality of slots is characterized bya width of less than or about 25% of a length of the at least onebaffle.